CJD112 NPN CJD117 PNP
SURFACE MOUNT SILICON COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
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CJD112
NPN CJD117
PNP
SURFACE MOUNT SILICON COMPLEMENTARY
POWER DARLINGTON
TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112 and CJD117 are complementary silicon power Darlington
transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
Thermal Resistance
ΘJA
100 100 5.0 2.0 4.0 50 20 1.75 -65 to +150 6.25 71.4
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO ICEV ICEV ICBO ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE fT Cob Cob
VCE=50V VCE=80V, VBE(off)=1.5V VCE=80V, VBE(off)=1.5V, TC=125°C VCB=80V VCB=100V VEB=5.0V IC=30mA IC=2.0A, IB=8.0mA IC=4.0A, IB=40mA IC=4.0A, IB=40mA VCE=3.0V, IC=2.0A VCE=3.0V, IC=0.5A VCE=3.0V, IC=2.0A VCE=3.0V, IC=4.0A VCE=10V, IC=750mA, f=1.0MHz VCB=10V, IE=0, f=0.1MHz (CJD112) VCB=10V, IE=0, f=0.1MHz (CJD117)
500 1000 200
25
MAX 20 10 500 10 20 2.0 100 2.0 3.0 4.0 2.8
12000
100 200
UNITS V V V A A mA W W °C
°C/W °C/W
UNITS μA μA μA μA μA mA V V V V V
MHz pF pF
R3 (21-Jan...