Infrared Emitting Diodes(GaAlAs)
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
CL-209
DIMENSIONS
The CL-209 is a high-power GaAlAs IRED mounted in a...
Description
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
CL-209
DIMENSIONS
The CL-209 is a high-power GaAlAs IRED mounted in a TO-46 metal stem with clear epoxy encapsulation, providing wide beam angle.
(Unit : mm)
FEATURES
¶UHigh output power ¶UWide beam angle 85 °æ deg. ¶UTO-46 epoxy potting type
APPLICATIONS
¶UOptical switches ¶UTransportation sensors
MAXIMUM RATINGS
Item
Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°…) 5
Symbol
VR F I PD FP I Topr. Tstg. Tsol.
Rating
5 80 130 0.8 £≠ 20 °≠£´ 80 £≠ 20 °≠£´ 80 240
Unit
V mA mW A °… °… °…
*1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current *3 Peak emission wavelength Spectral bandwidth Radiant intensity Half angle
(Ta=2° 5…)
Symbol
VF R I Îp ƒÎ PO ƒË
Conditions
F=20mA I VR=5V F=50mA I F=50mA I F=20mA I
Min.
Typ.
1.3 880 70 30 °æ 85
Max.
1.6 10
Unit.
V Ï A nm nm mV deg.
*3. Measured by tester of KODENSHI CORP.
- 1-
Infrared Emitting Diodes(GaAlAs)
CL-209
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current Vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
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