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1N4448X

JCET

FAST SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1N4448X FAST SWITCHING DIODE FEAT...


JCET

1N4448X

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1N4448X FAST SWITCHING DIODE FEATURES  Small Package  Low Reverse Current  Fast Switching Speed  Surface Mount Package Ideally Suited for Automatic Insertion MARKING: T5 SOD-523 T5 T5 The marking bar indicates the cathode Solid dot = Green molding compound device, if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RθJA Tj TSTG 100 100 100 75 53 500 250 2.0 150 833 150 -55~+150 Unit V V V mA mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol V (BR)R V (BR)R VF1 VF2 IR CT trr Min Typ 75 100 0.62 Max 0.72 1.0 25 4 Unit V V V V nA pF 4 ns Conditions IR=5μA IR=100μA IF=5mA IF=100mA VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω www.cj-elec.com 1 D,Mar,2015 REVERSE CURRENT I (nA) R FORWARD CURRENT I (mA) F Typical Characteristics 300 Pulsed 100 Forward Characteristics =100℃ T a 10 =25℃ T a ...




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