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1SS184

EIC

SILICON EPITAXIAL PLANAR DIODE

Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low f...


EIC

1SS184

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Description
Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb / RoHS Free SILICON EPITAXIAL PLANAR DIODE SOT-23 0.19 0.08 1.40 0.95 0.50 0.35 0.100 0.013 3.10 2.70 3 1 2 2.04 1.78 1.02 0.89 3 1.65 1.20 3.0 2.2 MECHANICAL DATA : * Case : SOT-23 plastic Case * Marking Code : B3 12 Dimensions in millimeters MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C) Parameter Maximum Peak Reverse Voltage Reverse Voltage Maximum Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IFM IF(AV) IFSM Ptot TJ TSTG Value 85 80 300 100 2 150 125 -55 to +125 Unit V V mA mA A mW °C °C ELECTRICAL CHARACTERISTICS (Ta =25 °C) Parameter Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time Test Condition IF = 1 mA IF = 10 mA IF = 100 mA VR = 30 V VR = 80 V VR = 0 V, f = 1 MHz IR = 10 mA Symbol VF IR CT Trr Min. - TYP 0.6 0.72 0.9 0.9 1.6 Max. 1.2 0.1 0.5 3 4 Unit V µA pF ns Page 1 of 2 Rev. 01 : September 20, 2006 FORWARD CURRENT, (mA) Certificate TH97/10561QM Certificate TW00/17276EM RATINGS AND CHARACTERISTIC CURVES ( 1SS184 ) FIG.1 - FORWARD CURRENT VS. FORWARD VOLTAGE 200 100 10 Ta = 100 °C 1 Ta = 25 °C 0.1 0.01 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE, (V) 1.0 FIG.3 - TOTAL CAPACIT...




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