1SS226

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS226 SWITCHING DIODE FEATURES z Low forward voltage z Fast reverse recovery time z Small total capacitance MARKING: C3 C3 C3 SOT-23 1 3 2 Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings ,Single Diode @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRM VRRM VRWM VR IFM IO IFSM PD RθJA TJ TSTG Limit 85 80 300 100 2 150 833 150 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time www.cj-elec.com V(BR) IR VF CD t rr IR= 100uA VR=80V IF=100mA VR=0V, f=1MHz IF=10mA 1 80 Unit V V mA mA A mW ℃/W ℃ ℃ Max Unit V 0.5 uA 1.2 V 3 pF 4 ns B,Aug,2014 FORWARD CURRENT IF (mA) Ta=100℃ Ta=25℃ REVERSE CURRENT IR (nA) Typical Characteristics Forward Characteristics 100 10 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 1000 100 10 1 0 Reverse Characteristics Ta=100℃ Ta=25℃ 20 40 60 REVERSE VOLTAGE VR (V) 80 CAPACITANCE BETWEEN TERMINALS CT (pF) POWER DISSIPA...