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1SS387

JCET

High Speed Switching Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed Switching Diode...


JCET

1SS387

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed Switching Diode FEATURES z Small surface mounting type z High speed z High reliability with high surge current handing capability SOD-523 MARKING: G G The marking bar indicates the cathode G Solid dot = Green molding compound device, if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature VRM VR IFM IO IFSM Pd RθJA Tj TSTG 85 80 200 100 2.0 150 833 150 -55~+150 Unit V V mA mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF1 VF2 VF3 IR1 IR2 CT trr Min. Typ. 0.62 0.75 Max. 1.2 0.1 0.5 3.0 4 Unit Conditions V IF=1mA V IF=10mA V IF=100mA μA VR=30V μA VR=80V pF VR=0,f=1MHZ ns VR=6V,IF=10mA,RL=100Ω www.cj-elec.com 1 C,Mar,2015 FORWARD CURRENT I (mA) F Typical Characteristics Forward Characteristics 200 100 10 =100℃ =25℃ T a T a 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE V (V) F 1.2 REVERSE CURRENT I (nA) R 1000 100 10 1 0 Reverse Characteristics T =100℃ a T =25℃ a 20 40 60 REVERSE VOLTAGE V (V) R 80 CAPACITAN...




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