High Speed Switching Diode
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS387 High Speed Switching Diode...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS387 High Speed Switching Diode
FEATURES z Small surface mounting type z High speed z High reliability with high surge current handing capability
SOD-523
MARKING: G
G The marking bar indicates the cathode
G Solid dot = Green molding compound device, if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature
VRM VR IFM IO IFSM Pd
RθJA Tj
TSTG
85
80
200 100 2.0 150
833 150 -55~+150
Unit V V
mA mA A mW ℃/W ℃ ℃
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current Capacitance between terminals Reverse recovery time
Symbol VF1 VF2 VF3 IR1 IR2 CT trr
Min.
Typ. 0.62 0.75
Max.
1.2 0.1 0.5 3.0 4
Unit
Conditions
V IF=1mA
V IF=10mA
V IF=100mA
μA VR=30V
μA VR=80V
pF VR=0,f=1MHZ
ns VR=6V,IF=10mA,RL=100Ω
www.cj-elec.com
1
C,Mar,2015
FORWARD CURRENT I (mA) F
Typical Characteristics
Forward Characteristics
200 100
10
=100℃
=25℃
T a
T a
1
0.1
0.01 0.0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE V (V) F
1.2
REVERSE CURRENT I (nA) R
1000
100
10
1 0
Reverse Characteristics
T =100℃ a
T =25℃ a
20 40 60
REVERSE VOLTAGE V (V) R
80
CAPACITAN...
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