MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF555/D
The RF Line
NPN Silicon RF Low Power Transistor
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF555/D
The RF Line
NPN Silicon RF Low Power
Transistor
Designed primarily for wideband large signal predriver stages in the UHF frequency range.
Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60% (Typ)
Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MRF555
1.5 W, 470 MHz RF LOW POWER
TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO 16 Vdc
Collector–Base Voltage
VCBO 36 Vdc
Emitter–Base Voltage
VEBO 4.0 Vdc
Collector Current — Continuous
IC 400 mAdc
Operating Junction Temperature
TJ 150 °C
Total Device Dissipation @ TC = 75°C (1, 2) Derate above 75°C
Storage Temperature Range
PD 3.0 Watts 40 mW/°C
Tstg – 55 to +150 °C
CASE 317D–02, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
—
— Vdc
Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
—
— Vdc
Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
—
— Vdc
Collector Cuto...