Document
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3350001 Preliminary
Dual IGBT HVIGBT Module
500 Amperes/3300 Volts
A
C
Q
DD
F (4 PLACES)
E E1 G C2
J HB
T U
V
C1
E1 E2 (C1)
E2
C2 G1 G2
RL S (5 PLACES)
M G
NW
PX
E1 C2
E1 C2
G1 G2 E2
C1 E2
K (4 PLACES)
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.11 130.0
B 5.51 140.0
C 4.49 114.0
D 2.24
57.0
E 2.42
61.5
F M8 M8 Metric
G 0.71
18.0
H 4.88 124.0
J 1.57
40.0
K 0.27
7.0 Dia.
L M4 M4 Metric
Dimensions M N P Q R S T U V W X
Inches 0.51 1.57 1.71 1.49 0.20 1.10 1.72 1.86 2.39 0.65 1.85
Millimeters 13.0 39.9 43.4 38.0 5.0 28.0 43.8 47.2 60.6 16.5 47.0
Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications.
Features: -55 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology AlSiC Baseplate Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Rugged SWSOA and RRSOA
Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction
11/14 Rev. 7
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3350001 Dual IGBT HVIGBT Module 500 Amperes/3300 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol QID3350001 Units
Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +150°C)
VCES 3300 Volts
Collector-Emitter Voltage (VGE = 0V, Tj = -50°C)
VCES 3200 Volts
Junction Temperature
Tj -50 to 150 °C
Operating Junction Temperature
Tjop
-50 to 150
°C
Storage Temperature
Tstg
-55 to 150
°C
Gate-Emitter Voltage (VCE = 0V)
VGES ±20 Volts
Collector Current (TC = 92°C)
IC 500 Amperes
Peak Collector Current (Pulse)
ICM 1000*1 Amperes
Diode Forward Current*2 IF 500 Amperes
Diode Forward Surge Current (Pulse)*2 IFM 1000*1 Amperes
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤1 50°C)
PC 4500 Watts
Mounting Torque, M4/M8 Terminal Screws
—
2/15
N·m
Mounting Torque, M6 Mounting Screws
— 6 N·m
Module Weight (Typical)
— 900 Grams
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Partial Discharge (V1 = 3500 Vrms, V2 = 2600 Vrms, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, (VCC ≤ 2600V, VCE ≤ VCES, VGE = +15V/-8V, Tj = 150°C).