2SK1134

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS=50V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 45 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1134 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=22A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=50V; VGS= 0 VSD Forward On-Voltage IS=45A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=2.1A; RL=50Ω toff Turn-off time 2SK1134 MIN TYP. MAX UNIT 50 V 2.1 3.0 4.0 V 0.025 0.03 Ω ±100 nA 500 uA 1.6 2.4 V 120 180 ns 170 255 ns 200 300 ns 550 800 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide ...