isc N-Channel MOSFET Transistor
2SK1277
DESCRIPTION ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage-
: VDSS=250V...
isc N-Channel MOSFET
Transistor
2SK1277
DESCRIPTION ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage-
: VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VALUE
UNI T
250
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
30
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c
Thermal Resistance,Junction to Case
0.83 ℃/W
th j-a
Thermal Resistance,Junction to Ambient 35 ℃/W
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isc N-Channel Mosfet
Transistor
2SK1277
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=10mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=250V; VGS= 0
VSD
Diode Forward Voltage
IF=30A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=30A;RL=25Ω
toff
Turn-off time
MIN TYP MAX UNIT
250
V
2.1
3.0
4.0
V
0.09 0.12
Ω
±100 nA
500
uA
0.9
1.8
V
140 210
ns
175 260
ns
180 270
ns
600 900
ns
Notice:...