isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fa...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VALUE
UNI T
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
15
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c
Thermal Resistance,Junction to Case
1.00 ℃/W
th j-a
Thermal Resistance,Junction to Ambient 35.0 ℃/W
2SK1279
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
2SK1279
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 0V; ID=10mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=8A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IF=15A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=15A;RL=25Ω
toff
Turn-off time
MIN TYP MAX UNIT
500
V
2.1
3.0
4.0
V
0.4 0.58
Ω
±100 nA
500
uA
0.95 1.8
V
100 150
ns
130 195
ns
160 240
n...