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2SK1280 Dataheets PDF



Part Number 2SK1280
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK1280 Datasheet2SK1280 Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipat.

  2SK1280   2SK1280


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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT th j-c Thermal Resistance,Junction to Case 0.83 ℃/W th j-a Thermal Resistance,Junction to Ambient 35.0 ℃/W 2SK1280 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1280 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= 0V; ID=10mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=9A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Diode Forward Voltage IF=18A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=18A;RL=25Ω toff Turn-off time MIN TYP MAX UNIT 500 V 2.1 3.0 4.0 V 0.35 0.50 Ω ±100 nA 500 uA 0.85 1.6 V 150 220 ns 185 270 ns 180 270 ns 630 900 ns Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


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