isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Mi...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
250
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
8
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.83 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
35
℃/W
2SK1319
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isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=250V; VGS= 0
2SK1319
MIN TYP MAX UNIT
250
V
2.0
4.0
V
0.52
Ω
±100 nA
500
uA
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intende...