HIGH-SPEED SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BAS16WX HIGH-SPEED SWITCHING DIOD...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BAS16WX HIGH-SPEED SWITCHING DIODE
FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance
MARKING: T4
SOD-323
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
VRM VRRM VRWM
VR VR(RMS)
Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms
IO IFSM
Power Dissipation
Pd
Thermal Resistance Junction to Ambient Junction Temperature
RθJA Tj
Storage Temperature
Electrical Ratings @Ta=25℃
Parameter Reverse voltage
Symbol V(BR)
TSTG
Test conditions IR=10μA
85
75
53 100 2.0 200 625 150 -55~+150
Min Typ 75
IF=1mA
Unit V
V
V mA
A mW ℃/W ℃ ℃
Max 0.715
Unit V
Forward voltage
IF=10mA VF
IF=50mA
0.855 1
V
IF=150mA
1.25
Reverse current
IR VR=75V
1 μA
Total capacitance
Ctot VR=0V,f=1MHz
2 pF
Reverse recovery time
trr IF= IR=10mA, Irr=0.1×IR,RL=100Ω
6 ns
www.cj-elec.com
1
C,Mar,2015
REVERSE CURRENT I (nA) R
FORWARD CURRENT I (mA) F
Typical Characteristics
Forward Characteristics
100
10
1
T a
=100℃
T a
=25℃
10000 1000 100 10
Reverse Characteristics
T =100℃ a
T =25℃ a
0.1 0.0
0.4 0.8 1.2
FORWARD VOLTAGE V (V) F
1.6
1 0 20 40 60 80 100
REVERSE VOLTAGE V (V) R
CAPACITANCE BETWEEN TERMINALS C (pF)
T
Capacitanc...
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