isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.125 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK1351
isc website：www.iscsemi.cn
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isc N-Channel Mosfet
Transistor
2SK1351
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
500
V
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
1.5
3.5
V
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2.5A
1.3
1.5
Ω
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
300
uA
VSD
Diode Forward Voltage
IF=5A; VGS=0
2.0
V
tr
Rise time
15
30
ns
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2.5A;RL=90Ω
30
60
ns
15
30
ns
toff
Turn-off time
40
85
...
