2SK1356

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 3 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.77 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 2SK1356 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1356 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 900 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A 3.3 4.3 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 300 uA VSD Diode Forward Voltage IF=3A; VGS=0 2.0 V tr Rise time 55 120 ns ton Turn-on time tf Fall time VGS=10V;ID=1.5A;RL=50Ω 70 165 ns 60 120 ns toff Turn-off time 280 55...