isc N-Channel MOSFET Transistor
2SK1357
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V...
isc N-Channel MOSFET
Transistor
2SK1357
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 50 ℃/W
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isc N-Channel Mosfet
Transistor
2SK1357
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
VSD
Diode Forward Voltage
IF=5A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2A;RL=200Ω
toff
Turn-off time
MIN TYP MAX UNIT
900
V
1.5
3.5
V
2.5
2.8
Ω
±100 nA
300
uA
1.9
V
18
35
ns
30
60
ns
12
25
ns
70
140
ns
Notice： ISC ...
