2SK1385

isc N-Channel MOSFET Transistor 2SK1385 DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30.0 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1385 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 800 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A 1.0 1.5 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 500 uA VSD Diode Forward Voltage IF=9A; VGS=0 1.5 1.58 V tr Rise time 230 350 ns ton Turn-on time tf Fall time VGS=10V;ID=9A;RL=25Ω 280 425 ns 160 240 ns toff Turn-off time 460 690 ns Notice： ISC reserves th...