2SK1386

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 7 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1386 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= 0V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 VSD Diode Forward Voltage IF=7A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=6A;RL=25Ω toff Turn-off time 2SK1386 MIN TYP MAX UNIT 450 V 2.5 3.5 5.0 V 0.98 1.3 Ω ±100 nA 500 uA 1.1 1.65 V 50 80 ns 70 110 ns 50 80 ns 130 200 ns Notice： ISC reserves the rights to make changes...