DA221

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode DA221 SWITCHING DIODE FEATURES: z Bias circuits z Protection circuits MARKING: K SOT-523 1 2 K K Solid dot = Green molding compound device, if none,the normal device. 3 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range Symbol VRM VRRM VR IFM IFSM IO PD RθJA TJ TSTG Limit 20 20 200 2.0 100 150 833 150 -55~+150 Electrical Characteristics @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Symbol Min Typ V (BR) 20 VF IR Max Unit V 1V 0.1 uA Unit V V mA A mA mW ℃/W ℃ ℃ Conditions IR=100μA IF=10mA VR=15V www.cj-elec.com 1 C,Oct,2014 REVERSE CURRENT I (nA) R FORWARD CURRENT I (mA) F Typical Characteristics Forward Characteristics 100 10 1 T a =100℃ T a =25℃ 10000 1000 100 10 Reverse Characteristics T =100℃ a T =25℃ a 0.1 0.0 0.4 0.8 FORWARD VOLTAGE V (V) F 1.2 1 0 4 8 12 16 20 REVERSE VOLTAGE V (V) R CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 1.6 T =25℃ a f=1MHz 1.4 1.2 1.0 0.8 0.6 0 4 8 12 16 20 REVERSE VOLTAGE V (V) R Power Derating Curve 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE...