SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Diodes
DA227 SWITCHING DIODE
FEATURES z ...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Diodes
DA227 SWITCHING DIODE
FEATURES z High speed z Suitable for high packing density layout z High reliability
MARKING: N20
SOT-353
54 123
Maximum Ratings @Ta=25℃
Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range
Symbol VRM VR IFM
IFSM IO PD RθJA
TJ TSTG
Limit 80 80 300
2.0 100 200 625 150 -55~+150
Unit V V
mA
A mA mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time
Symbol
V(BR) IR VF CD trr
Test conditions
IR= 100μA
VR=70V IF=100mA VR=6V, f=1MHz VR=6V, IF=5mA
Min 80
Max
0.1 1.2 3.5 4
Unit
V
μA
V
pF ns
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1
C,Mar,2016
FORWARD CURRENT I (mA) F
Typical Characteristics
Forward Characteristics
100
Ta=100℃
10
Ta=25℃
1
0.1 0.2
1.2
1.1
0.4 0.6 0.8
FORWARD VOLTAGE V (V) F
1.0
Capacitance Characteristics
T =25℃ a
f=1MHz
CAPACITANCE BETWEEN TERMINALS C (pF)
T
1.0
0.9 0 4 8 12 16 20
REVERSE VOLTAGE V (V) R
POWER DISSIPATION P (W) D
REVERSE CURRENT I (nA) R
Reverse Characteristics
10000
1000 100
Ta=100℃
10
Ta=25℃
1 0.1
250
1 10
REVERSE VOLTAGE V (V) R
Power Derating Curve
80
200
150
...
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