DAP222

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode DAP222 SWITCHING DIODE FEATURES: z High speed z Suitable for high packing density layout z High reliability MARKING: P SOT-523 1 3 2 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IFSM IO PD RθJA TJ TSTG Limit 80 80 300 2.0 100 150 833 150 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol Test conditions V(BR) IR= 100μA IR VR=70V Min Max 80 0.1 Forward voltage Diode capacitance Reverse recovery time VF IF=100mA CD VR=6V, f=1MHz trr VR=6V, IF=IR=5mA 1.2 3.5 4 Unit V V mA A mA mW ℃/W ℃ ℃ Unit V μA V pF ns www.cj-elec.com 1 B,Oct,2014 REVERSE CURRENT I (nA) R FORWARD CURRENT I (mA) F T a =100℃ Typical Characteristics Forward Characteristics 300 100 10 1 T a =25℃ 10000 1000 100 10 Reverse Characteristics T =100℃ a T =25℃ a 0.1 0.0 0.4 0.8 1.2 FORWARD VOLTAGE V (V) F 1.6 1 0 20 40 60 80 REVERSE VOLTAGE V (V) R CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 1.6 T =25℃ a f=1MHz 1.4 1.2 1.0 0.8 0.6 0 4 8 12 16 20 REVERSE VOLTAGE V (V) R Power Derat...