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SSPR46N03

SeCoS

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente SSPR46N03 46A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pr...


SeCoS

SSPR46N03

File Download Download SSPR46N03 Datasheet


Description
Elektronische Bauelemente SSPR46N03 46A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSRS46N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SPR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SPR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 46N03 = Date code PACKAGE INFORMATION Package MPQ SPR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20 0.65 BSC. 2.40 2.60 REF. G H I J K L Millimeter Min. Max. 1.35 1.55 0.24 0.35 1.13 REF. 0.30 0.50 0.10 0.20 0.70 0.90 SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current 1@VGS=10V TC=100°C TA=25°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA=70°C VDS VGS ID IDM EAS 30 ±20 46 29 11 8.7 92 130 Avalanche Current Power Dissipation 4 TA=25°C IAS PD 34 29 Operating Junction & Storage Temperature TJ, TSTG 55~150 Thermal Resistance Rating Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max). RθJA RθJC 75 4.31 Unit V V A A mJ A W °C °C / W °C...




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