Document
DATA SHEET
SEMICONDUCTOR GPP SURFACE MOUNT RECTIFIER VOLTAGE- 50 to 1000 Volts CURRENT - 2.0 Amperes
G2 A THRU G2 M
SMF Unit: inch ( mm )
0.110(2.80) 0.095(2.40) 0.056(1.43) 0.054(1.38)
FEATURES
• For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Plastic package has Underwriters Laboratory Flammability
Classification 94V-O • Low Forward Drop • High temperature soldering : 260°C /10 seconds at terminals
0.141(3.60) 0.126(3.20)
0.052(1.30) 0.043(1.10)
0.82MIN (1.27MIN)
MECHANICAL DATA
Case: SMF molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Standard packaging: 12mm tape (EIA-481)
nds0.050MIN
(1.27MIN)
minals
0.87MAX (2.20MAX)
0.201REF (5.1REF)
0.189(4.80) 0.173(4.40)
0.035(0.90)TYPICAL
0.009(0.22) 0.006(0.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
SY MBOLS G2A G2B G2D G2G G2J G2K G2M
UNIT
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current, at T L=75°C
VRRM VRMS VDC
I(AV)
50 35 50
100 200 400 600 800 1000 70 140 280 420 560 700 100 200 400 600 800 1000
2. 0
V V V
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I FSM
60 A
Maximum Instantaneous Forward Voltage at 2.0A
Maximum DC Reverse Curren
TA =25°C
at Rated DC Blocking Voltage
TA =125°C
Maximum Reverse Recovery Time(Note 1) TJ=25°C
Typical Junction Capacitance (Note 2)
Maximum Thermal Resistance(Note 3)
Operating and Storage Temperature Range
VF
IR
TRR CJ Rө JA TJ,TSTG
1. 1 5. 0 100 2. 5 12 75 - 55 t o +150
V µA µA µs pF °C/ W °C
NOTES:
1. Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I rr =0.25A 2. Measured at 1 MHz and applied V r= 4.0 volts. 3. 8.0 mm2 ( .013mm thick ) land areas.
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RATING AND CHARACTERISTIC CURVES G2 A THRU G2 M
A V E R A G E F O R W A R D C U R R E N T, AM PERES
IN S TA N TA N E O U S R E V E R S E C U R R E N T, M IC R O A M P E R E S
3.0
SINGLE PHASE HALF WAVE 60Hz 2.5 RESISTIVE OR INDUCTIVE LOAD
P.C.B MOUNTED ON 0.315 X 0.315" (8.0 x 8.0mm) COPPER PAD AREAS 2.0
1.5 1.0
0.5
0 0 75
LEAD TEMPERATURE, O C
Fig.1-FORWARD CURRENT DERATING CURVE
150
100
10
TJ = 100OC 1.0
0.1 0.01
TJ = 75OC TJ = 25OC
0.001 0
20 40
60 80 100 120 140
PERCENT OF PEAK REVERSE VOLTAGE, %
Fig.3-TYPICAL REVERSE CHARACTERISTICS
100 50
20
10
Units Mounted On 20in2 (5.4mm)+0.5mil
5 inches(0.013mm)
Thick copper Land Areas
2
1 0.01
0.1
1.0
10
HEATING TIME(SEC)
Fig.5-TRANSIENT THERMAL IMPEDANCE
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100
2
C A P A C ITA N C E ,p F
PEA K FO RW A R D SU R G E C U R R EN T ,A M P E R E S
IN S TA N TA N E O U S F O R W A R D C U R R E N T, AM PERES
100
40 20 10
4.0 2.0 1.0
0.4 0.2
0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
1.8
Fig.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
60
8.3ms Single Half Sine-Wave JEDEC Method
30
0 12
6 10
20 40 60 100
NUMBER OF CYCLES AT 60Hz
Fig.4-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
100 50
20 10 5
TJ = 25OC f = 1.0mHz Vsig = 50mVp-p
2
1 0.1 1.0
10 100
REVERSE VOLTAGE, VOLTS
Fig.6-TYPICAL JUNCTION CAPACITANCE
1000
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T H E R M A L IM P E D A N C E (O C /W )
.