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2SK1403A Dataheets PDF



Part Number 2SK1403A
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOSFET
Datasheet 2SK1403A Datasheet2SK1403A Datasheet (PDF)

2SK1403A Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0943-0300 Rev.3.00 May 15, 2006 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.3.00 May 15, 2006 page 1 of 6 2SK1403A Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage.

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2SK1403A Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0943-0300 Rev.3.00 May 15, 2006 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.3.00 May 15, 2006 page 1 of 6 2SK1403A Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance |yfs| Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Body to drain diode forward voltage VDF Body to drain diode reverse recovery time trr Note: 3. Pulse test Min 650 ±30 — — 2.0 — 4.0 — — — — — — — — — Typ — — — — — 1.0 6.5 1180 265 50 15 50 105 45 0.95 420 Ratings 650 ±30 8 32 8 100 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Max — — ±10 250 3.0 1.4 — — — — — — — — — — Unit V V µA µA V Ω (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 550 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V *3 S ID = 4 A, VDS = 10 V *3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID = 4 A, VGS = 10 V, ns RL = 7.5 Ω ns ns V IF = 8 A, VGS = 0 ns IF = 8 A, VGS = 0, diF/dt = 100 A/µs Rev.3.00 May 15, 2006 page 2 of 6 2SK1403A Main Characteristics Power vs. Temperature Derating 120 80 40 Channel Dissipation Pch (W) Drain Current ID (A) 0 50 100 150 Case Temperature TC (°C) Typical Output Characteristics 10 10 V 8 6V 5 V Pulse Test 4.5 V 6 4 4V 2 VGS = 3.5 V 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 ID = 10 A 12 8 5A 4 2A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) Rev.3.00 May 15, 2006 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) Drain Current ID (A) is liOmpitereadtiboyn iRnDSt (hions)area Maximum Safe Operation Area 50 30 10 µs 100 10 3 1 0.3 0.1 0.05 1 PW DC = 10 Operation ms (1 1 (T ms Shot C = 25°C) Ta = 25°C 2SK1403A 3 10 30 100 300 pulse) µs 1,000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 10 VDS = 20 V Pulse Test 8 6 4 TC = 75°C 25°C 2 –25°C 0 2 4 6 8 10 Gate to Source Voltage.


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