Document
2SK1403A
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
REJ03G0943-0300 Rev.3.00
May 15, 2006
D G 1. Gate
2. Drain (Flange)
3. Source S
Rev.3.00 May 15, 2006 page 1 of 6
2SK1403A
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch Tstg
Item
Symbol
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery time
trr
Note: 3. Pulse test
Min 650 ±30 — — 2.0 —
4.0 — — — — — — — — —
Typ — — — — — 1.0
6.5 1180 265
50 15 50 105 45 0.95 420
Ratings 650 ±30 8 32 8 100 150
–55 to +150
(Ta = 25°C)
Unit V V A A A W
°C °C
Max — — ±10 250 3.0 1.4
— — — — — — — — — —
Unit V V µA µA V Ω
(Ta = 25°C)
Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 550 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V *3
S ID = 4 A, VDS = 10 V *3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID = 4 A, VGS = 10 V, ns RL = 7.5 Ω ns ns V IF = 8 A, VGS = 0 ns IF = 8 A, VGS = 0,
diF/dt = 100 A/µs
Rev.3.00 May 15, 2006 page 2 of 6
2SK1403A
Main Characteristics
Power vs. Temperature Derating 120
80
40
Channel Dissipation Pch (W)
Drain Current ID (A)
0 50 100 150 Case Temperature TC (°C)
Typical Output Characteristics
10 10 V
8
6V 5 V Pulse Test
4.5 V
6
4 4V
2 VGS = 3.5 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
20 Pulse Test
16 ID = 10 A
12
8 5A
4 2A
0 4 8 12 16 20 Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Rev.3.00 May 15, 2006 page 3 of 6
Static Drain to Source on State Resistance RDS (on) (Ω)
Drain Current ID (A)
Drain Current ID (A)
is liOmpitereadtiboyn iRnDSt (hions)area
Maximum Safe Operation Area
50 30
10
µs 100
10
3
1
0.3 0.1 0.05
1
PW
DC
=
10
Operation
ms
(1
1 (T
ms
Shot
C = 25°C)
Ta = 25°C
2SK1403A
3 10 30 100 300
pulse)
µs
1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics 10
VDS = 20 V Pulse Test 8
6
4 TC = 75°C 25°C
2 –25°C
0 2 4 6 8 10 Gate to Source Voltage.