isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fas...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
450
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
30
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK1445
isc website:www.iscsemi.cn
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isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=450V; VGS= 0
VSD
Diode Forward Voltage
IF=5A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=3A;RL=50Ω
toff
Turn-off time
2SK1445
MIN TYP MAX UNIT
450
V
2.0
3.0
V
1.0
1.4
Ω
±100 nA
1
mA
1.8
V
30
ns
45
ns
45
ns
175
ns
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for t...