2SK1507

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1507 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=0; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 VSD Diode Forward Voltage IF=9A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=9A;RL=25Ω toff Turn-off time 2SK1507 MIN TYP MAX UNIT 600 V 2.5 3.5 5.0 V 0.85 1.0 Ω ±100 nA 500 uA 1.1 1.5 V 30 45 ns 80 120 ns 80 120 ns 160 240 ns Notice： ISC reserves the rights to make changes of the content herein th...