2SK1512

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1512 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) APPLICATIONS ·High voltage,high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNI T 900 V ±30 V 10 A 150 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 0.83 ℃/W Thermal Resistance,Junction to Ambient 35 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK1512 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 VSD Diode Forward Voltage IF=10A; VGS=0 MIN TYP MAX UNIT 900 V 2.5 3.5 5.0 V 1.0 1.2 Ω ±100 nA 500 uA 0.96 1.44 V tr Rise time 120 180 ns ton Turn-on time tf Fall time toff Turn-off time VGS=10V;ID=10A;RL=25Ω 160 240 110 165 350 425 ns ns n...