2SK1517

2SK1517, 2SK1518 Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) G 1 2 3 REJ03G0947-0200 (Previous: ADE-208-1287) Rev.2.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1517, 2SK1518 Absolute Maximum Ratings Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Drain to source 2SK1517 breakdown voltage 2SK1518 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1517 current 2SK1518 Gate to source cutoff voltage Static drain to source on 2SK1517 state resistance 2SK1518 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) t...