SCT30N120

SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package Datasheet - production data Features  Very tight variation of on-resistance vs. temperature  Very high operating junction temperature capability (TJ = 200 °C)  Very fast and robust intrinsic body diode  Low capacitance Applications Figure 1: Internal schematic diagram  Solar inverters, UPS  Motor drives  High voltage DC-DC converters  Switch mode power supply D(2, TAB) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for highefficiency and high power density applications. Table 1: Device summary Order code Marking Package Packaging SCT30N120 SCT30N120 HiP247™ Tube May 2017 DocID023109 Rev 11 This is information on a product in full production. 1/13 www.st.com Contents Contents SCT30N120 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics .........................