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2SK1520

Renesas

Silicon N-Channel MOSFET

2SK1519, 2SK1520 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High sp...


Renesas

2SK1520

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Description
2SK1519, 2SK1520 Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) G 1 23 REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 D 1. Gate 2. Drain 3. Source S Rev.3.00 Apr 27, 2006 page 1 of 6 2SK1519, 2SK1520 Absolute Maximum Ratings Item Drain to source voltage 2SK1519 2SK1520 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Drain to source 2SK1519 breakdown voltage 2SK1520 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1519 current 2SK1520 Gate to source cutoff voltage Static drain to source on 2SK1519 state resistance 2SK1520 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF tr...




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