2SK1527

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) isc Product Specification 2SK1527 APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNI T 500 V ±30 V 40 A 250 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 1.0 ℃/W Thermal Resistance,Junction to Ambient 50 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK1527 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 500 V VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=20A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 2.0 3.0 V 0.12 0.16 Ω ±10 uA IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 250 uA VSD Diode Forward Voltage IF=40A; VGS=0 1.2 V tr Rise time 175 ns ton Turn-on time tf Fall t...