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BAW156

Pan Jit International

LOW LEAKAGE SWITCHING DIODES

BAS116/BAW156/BAV170/BAV199 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts POWER 250mWatts FEATURES •...


Pan Jit International

BAW156

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BAS116/BAW156/BAV170/BAV199 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts POWER 250mWatts FEATURES Suface mount package ideally suited for automatic insertion. Very low leakage current. 2pA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23 plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx weight: 0.008 gram Marking: BAS116: PA,BAW156:P4,BAV170:P3,BAV199:PB ABSOLUTE RATINGS (each diode) Reverse Voltage PA RA ME TE R Peak Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Surge Current at t=1.0us THERMAL CHARACTERISTICS PA RA ME TE R Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) J u n c t i o n Te m p e r a t u r e S t o r a g e Te m p e r a t u r e S ym b o l VR V RM IF I FSM S ym b o l P TOT RθJA TJ TSTG Value 75 100 0.2 4.0 Value 250 500 -55 to 150 -55 to 150 NOTE: 1. FR-4 Board = 70 x 60 x 1mm. SINGLE COMMON ANODE COMMON CATHODE Uni ts V V A A Uni ts mW OC/W OC OC SERIES STAD-DEC.07.2007 BAS116 BAW156 BAV170 BAV199 PAGE . 1 BAS116/BAW156/BAV170/BAV199 ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) PA RA ME TE R Reverse B reakdown Voltage Reverse C urrent Forward Voltage To t a l C a p a c i t a n c e Re ve r s e Re c o ve r y Ti m e S ymbol V (BR) IR VF CJ t rr Te s t C o n d i t i o n IR=1 0 0 uA V R=7 5 V V R=7 5 V,TJ=1 5 0 O C IF=1 m...




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