BAV199

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAV199 SWITCHING DIODE SOT-23 FEATURES z This Switching Diode has The Following Features: z Low Leakage Current Applications Marking: JY 1 2 JY JY Solid dot = Green molding compound device, if none, the normal device 3 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IFM IO IFSM PD TJ TSTG Limit 70 70 500 215 1.0 200 150 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol Test conditions V(BR) IR= 100μA IR VR=70V IF=1mA VF IF=10mA IF=50mA IF=150mA CD VR=0, f=1MHz t r r IF = IR=10mA Min 70 www.cj-elec.com 1 Unit V V mA mA A mW ℃ ℃ Max 5 900 1000 1100 1250 2 3 Unit V nA mV pF μs B,Oct,2014 REVERSE CURRENT I (nA) R FORWARD CURRENT I (mA) F T a =100 Typical Characteristics Forward Characteristics 500 100 10 ℃ T a =25℃ Reverse Characteristics 0.8 T =100 ℃ a 0.6 T =25 ℃ a 0.4 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D 1 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE V (V) F Capacitance Characteristics 2.5 T =25℃ a f=1MHz 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 REVERSE VOL...