BAV70T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56T BAV70 T BAV99T SOT-523 MARKING:JD JD MARKING:JJ JJ MARKING:JE JE JD JJ JE Solid dot = Green molding compound device, if none, the normal device Maximum Ratings @Ta=25℃ Parameter Reverse Voltage Forward Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Symbol VR IF IFSM PD RθJA TJ TSTG Limit 85 75 2.0 150 833 150 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse breakdown voltage V(BR) IR= 1μA Reverse voltage leakage current IR1 VR=75V IR2 VR=25V Forward voltage Diode capacitance Reverse recovery time IF=1mA VF IF=10mA IF=50mA IF=150mA CD VR=0 f=1MHz t rr IF=IR=10mA Irr=0.1×IR,RL=100Ω Min 85 Max 2 0.03 715 855 1000 1250 1.5 4 Unit V mA A mW ℃/W ℃ ℃ Unit V μA μA mV pF ns www.cj-elec.com 1 B,Oct,2014 FORWARD CURRENT I (mA) F Typical Characteristics Forward Characteristics 300 100 =100℃ 30 10 T a =25℃ T a 3 1 0.3 0.1 0.0 0.4 0.8 1.2 FORWARD VOLTAGE V (V) F 1.6 REVERSE CURRENT I (nA) R 10000 3000 1000 300 100 30 10 3 1 0 Reverse Characteristics T =100℃ a T =25℃ a 20 40 60 80 REVERSE VOLTAGE V (V) R 100 Capacitance Characteristics 1....