BAV70T

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : ESM. Low Forward Voltage : VF=0.9V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Continuous Forward Current IF 150 Surge Current (10ms) IFSM 2 Power Dissipation PD 200 * Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V V mA A mW A G H BAV70T SILICON EPITAXIAL PLANAR DIODE C E B 2 13 DIM MILLIMETERS A 1.60+_ 0.10 D B 0.85+_ 0.10 C 0.70+_ 0.10 D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10 H 0.50 J 0.13+_ 0.05 J 1. ANODE 1 2. ANODE 2 3. CATHODE 3 21 ESM Marking H2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance VF(1) VF(2) VF(3) IR CT Reverse Recovery Time trr TEST CONDITION IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz IF=10mA MIN. - TYP. 0.60 0.72 - MAX. - 1.25 0.5 3.0 4.0 UNIT V A pF nS 2009. 1. 23 Revision No : 1 1/2 FORWARD CURRENT I F (mA) BAV70T 10 3 10 2 10 1 10 -1 10 -2 0 IF - VF C C TaTa=-=2255 Ta=100 C 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 REVERSE CURRENT IR (µA) IR - VR 10 1 Ta=100 C Ta=75 C 10-1 Ta=50 C 10-2 Ta=25 C 10-3 0 20 40 60 REVERSE VOLTAGE VR (V) 80 C T - VR 2.0 f=1MHz Ta=25 C 1.6 1.2 0...