BAV756DW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV756DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KCA KCA KCA Solid dot = Pin1 indicate. Solid dot = Green molding compound device, if none,the normal device. SOT-363 65 4 1 23 Maximum Ratings @Ta=25℃ Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t = 8.3ms Power Dissipation Thermal Resistance From Junction to Ambient Operating Junction Temperature Storage Temperature Symbol VRRM VRWM VR IFM IO IFSM PD RθJA TJ TSTG Limit 75 300 150 2 200 625 150 -55~+150 Unit V mA mA A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Total capacitance Reveres recovery time www.cj-elec.com Symbol V(BR) IR VF Ctot trr Test conditions IR= 2.5µA VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA VR=0, f=1MHz IF=IR=10mA,Irr=0.1×IR, RL=100Ω 1 Min 75 Max 2.5 0.025 715 855 1000 1250 2 4 Unit V µA mV pF ns C,Mar,2016 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D FORWARD CURRENT I (mA) F T a =100℃ Typical Characteristics Forward Characteristics 300 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE V (V...