BAV99DW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV99DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KJG KJG KJG Solid dot = Pin1 indicate. Solid dot = Green molding compound device, if none,the normal device. SOT-363 654 123 Maximum Ratings @Ta=25℃ Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t= 8.3ms Power Dissipation Thermal Resistance Junction to Ambient Operating Junction Temperature Storage Temperature Symbol VRRM VRWM VR IFM IO IFSM PD RθJA TJ TSTG Limit 75 300 150 2.0 200 625 150 -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse voltage V(BR) IR=2.5μA 75 Reverse current IR VR=75V VR=20V IF=1mA Forward voltage VF IF=10mA IF=50mA IF=150mA Total capacitance Ctot VR=0,f=1MHz Reverse recovery time trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω Typ Max 2.5 25 0.715 0.855 1 1.25 2 4 www.cj-elec.com 1 Unit V mA mA A mW ℃/W ℃ ℃ Unit V μA nA V pF ns C,Mar,2016 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D FORWARD CURRENT I (mA) F T a =100℃ Typical Characteristics Forward Characteristics 300 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE V (V) F Capacitan...