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BAV99DW

SeCoS

Surface Mount Switching Diode Array

Elektronische Bauelemente BAV99DW Quad Chips Surface Mount Switching Diode Array FEATURES RoHS Compliant Product A su...


SeCoS

BAV99DW

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Elektronische Bauelemente BAV99DW Quad Chips Surface Mount Switching Diode Array FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications · High Conductance TOP VIEW MAXIMUM RATINGS (EACH DIODE) Rating Symbol Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS VR IF IFM(surge) Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Symbol PD Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C RqJA PD Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING RqJA TJ, Tstg BAV99DW= KJG Value 75 150 400 Max 200 1.8 556 250 2.4 417 – 55 to +150 Unit Vdc mAdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) V(BR) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) IR CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω trr 1. FR– 5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina....




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