Document
Preliminary Technical Information
Polar3TM HiperFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3
TO-263 AA (IXFA)
VDSS = ID25 =
RDS(on)
500V 20A 300m
TO-220AB (IXFP)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
FMCd Weight
G S
D (Tab)
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
Maximum Ratings
500 500
30 40
V V
V V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20 40
10 300
35
380
-55 ... +150 150
-55 ... +150
A A
A mJ
V/ns
W
C C C
Maximum Lead Temperature for Soldering
300 °C
Plastic Body for 10s
260 °C
Mounting Force Mounting Torque
10..65/2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-3P TO-247
2.5 g 3.0 g 5.5 g 6.0 g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max.
500 V
3.0 5.0 V
100 nA
25 A 1.25 mA 300 m
GD S TO-3P (IXFQ)
D (Tab)
G D S
TO-247 (IXFH)
D (Tab)
GDS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
© 2013 IXYS CORPORATION, All Rights Reserved
DS100414A(11/13)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi Gate Input Resistance
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC RthCS
TO-220 TO-247 & TO-3P
IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3
Characteristic Values
Min. Typ.
Max.
11 18
S
1800 230 8.3
pF pF pF
2.3
10 ns
5 ns
43 ns 9 ns
36 nC 7 nC
13 nC
0.50 0.25
0.36 C/W C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr IRM QRM
IF = 10A, -di/dt = 100A/s VR = 100V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
20 A
80 A
1.4 V
250 ns 8.0 A 0.6 μC
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
Fig. 1. Output Characteristics @ TJ = 25ºC
20 VGS = 10V
18 7V 16
6V 14
12
10
8 5.5V 6
4
2 5V
0 0123456 VDS - Volts
7
Fig. 3. Output Characteristics @ TJ = 125ºC
20 VGS = 10V
18 7V 16
14 6V
12
10 5V
8
6 4.5V
4
2 4V
0 0 2 4 6 8 10 12 14 16 VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current
3.8
VGS = 10V 3.4
3.0 TJ = 125ºC
2.6
2.2
1.8 1.4 TJ = 25ºC
1.0
0.6 0
5 10 15 20 25 30 35 40 45 ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
45 VGS = 10V
40 8V
35 7V
30
25
20 6V
15
10
5 5V
0 0 5 10 15 20 25 30 VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature
3.4
VGS = 10V 3.0
2.6 I D = 20A
2.2
1.8 I D = 10A
1.4
1.0
0.6
0.2 -50
-25
0 25 50 75 100 125 150 TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
24
20
16
12
8
4
0 -50
-25
0 25 50 75 100 125 150 TC - Degrees Centigrade
ID - Amperes
RDS(on) - Normalized
© 2013 IXYS CORPORATION, All Rights Reserved
IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3
ID - Amperes
Fig. 7. Input Admittance
20
18
16
14
12
10
TJ = 125ºC
25ºC
8 - 40ºC
6
4
2
0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS - Volts
g f s - Siemens
Fig. 8. Transconductance
30 TJ = - 40ºC
25
25ºC 20
125ºC 15
10
5
0 0 2 4 6 8 10 12 14 16 18 20 22 ID - Amperes
IS - Amperes
Fig. 9. .