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IXFH20N50P3 Dataheets PDF



Part Number IXFH20N50P3
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXFH20N50P3 DatasheetIXFH20N50P3 Datasheet (PDF)

Preliminary Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 TO-263 AA (IXFA) VDSS = ID25 = RDS(on)  500V 20A 300m TO-220AB (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight G S D (Tab) Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 500  30  40 V V V V TC = 25.

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Preliminary Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 TO-263 AA (IXFA) VDSS = ID25 = RDS(on)  500V 20A 300m TO-220AB (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight G S D (Tab) Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 500  30  40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 20 40 10 300 35 380 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force Mounting Torque 10..65/2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.0 V           100 nA 25 A 1.25 mA 300 m GD S TO-3P (IXFQ) D (Tab) G D S TO-247 (IXFH) D (Tab) GDS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo Controls © 2013 IXYS CORPORATION, All Rights Reserved DS100414A(11/13) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input Resistance td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS TO-220 TO-247 & TO-3P IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 Characteristic Values Min. Typ. Max. 11 18 S 1800 230 8.3 pF pF pF 2.3   10 ns 5 ns 43 ns 9 ns 36 nC 7 nC 13 nC 0.50 0.25 0.36 C/W C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM QRM IF = 10A, -di/dt = 100A/s VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 20 A 80 A 1.4 V 250 ns 8.0 A 0.6 μC Note 1. Pulse test, t  300s, duty cycle, d  2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes Fig. 1. Output Characteristics @ TJ = 25ºC 20 VGS = 10V 18 7V 16 6V 14 12 10 8 5.5V 6 4 2 5V 0 0123456 VDS - Volts 7 Fig. 3. Output Characteristics @ TJ = 125ºC 20 VGS = 10V 18 7V 16 14 6V 12 10 5V 8 6 4.5V 4 2 4V 0 0 2 4 6 8 10 12 14 16 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current 3.8 VGS = 10V 3.4 3.0 TJ = 125ºC 2.6 2.2 1.8 1.4 TJ = 25ºC 1.0 0.6 0 5 10 15 20 25 30 35 40 45 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 45 VGS = 10V 40 8V 35 7V 30 25 20 6V 15 10 5 5V 0 0 5 10 15 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature 3.4 VGS = 10V 3.0 2.6 I D = 20A 2.2 1.8 I D = 10A 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 24 20 16 12 8 4 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade ID - Amperes RDS(on) - Normalized © 2013 IXYS CORPORATION, All Rights Reserved IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 ID - Amperes Fig. 7. Input Admittance 20 18 16 14 12 10 TJ = 125ºC 25ºC 8 - 40ºC 6 4 2 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS - Volts g f s - Siemens Fig. 8. Transconductance 30 TJ = - 40ºC 25 25ºC 20 125ºC 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 22 ID - Amperes IS - Amperes Fig. 9. .


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