SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAS16TW/MMBD4148TW SWITCHING DIOD...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAS16TW/MMBD4148TW SWITCHING DIODE
SOT-363
FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance
MARKING:
654
MMBD4148TW:KA2 BAS16TW:KA2
---
KA2 KA2
+++ ---
Solid dot = Pin1 indicate.
123
KA2 KA2 Solid dot = Green molding compound device,
+++
if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature
VRM VRRM VRWM
VR VR(RMS)
IFM IO IFSM
Pd
RθJA Tj
TSTG
100
75
53 300 150 2.0 200 625 150 -55~+150
V
V
V mA mA
A mW ℃/W ℃ ℃
Electrical Ratings @Ta=25℃
Parameter Reverse breakdown voltage
Forward voltage
Reverse current Capacitance between terminals Reverse recovery time
Symbol Min Typ Max Unit
V (BR)
75
V
VF1 0.715 V
VF2 0.855 V
VF3 1.0 V
VF4 1.25 V
IR1 1 μA
IR2 25 nA
CT 2 pF
trr 4 ns
Conditions IR=10μA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V
VR=0V,f=1MHz IF=IR=10mA
Irr=0.1XIR,RL=100Ω
www.cj-elec.com
1
C,Mar,2016
JUNCTION CAPACITANCE C (pF)
J
POWER DISSIPATION P (mW) D
FORWARD CURRENT I (mA) F
T a
=1...
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