DIM1600FSS12-L000

DIM1600FSS12-L000 Single Switch IGBT Module DS5968-1 August 2010 (LN27436) FEATURES  10µs Short Circuit Withstand  Isolated Cu Base with Al2O3 Substrates  Optimised for high frequency operation  Lead Free construction KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 1200V 3.1V 1600A 3200A * Measured at the power busbars, not the auxiliary terminals APPLICATIONS  High Power Inverters  Motor Controllers  Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM1600FSS12-L000 is a single switch 1200V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for high frequency operation. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 7(C) 8(G) 1(C) 2(C) 9(E) 3(E) 4(E) Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DIM1600FSS12-L000 Note: When ordering, please use the complete part number Outline type code: F (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1/8 DIM1600FSS12-L0...