Document
Replaces DS6172-1
Preliminary Information
DIM250XCM65-TS000
Single Switch IGBT Module
DS6172-2 April 2015 (LN32525)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free construction
APPLICATIONS
High Reliability Inverters
Motor Controllers Traction Drives
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 6500V and currents up to 2400A.
The DIM250XCM65-TS000 is a 6500V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
KEY PARAMETERS
VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
6500V 3.0V 250A 500A
* Measured at the auxiliary terminals
3(C) 2(G)
7(C) 5(A)
1(E) 6(E) 4(K)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM250XCM65-TS000
Note: When ordering, please use the complete part number
Outline type code: X
(See Fig. 11 for further information) Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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DIM250XCM65-TS000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES Collector-emitter voltage
VGES IC
IC(PK) Pmax
I2t
Visol QPD
Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (IGBT arm) Diode I2t value (Diode arm) Isolation voltage – per module Partial discharge – per module
Test Conditions VGE = 0V, Tj = 125°C VGE = 0V, Tj = 25°C VGE = 0V, Tj = -40°C
Tcase = 90°C 1ms, Tcase = 115°C Tcase = 25°C, Tj = 125°C
VR = 0, tp = 10ms, Tj = 125°C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS
Max. Units
6500 6500 6000 ±20 250 500 3300
22 22
V V V V A A W kA2s kA2s
10.2 kV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Comparative Tracking Index):
>600
Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj
Parameter
Thermal resistance – transistor (per arm) Thermal resistance – diode (IGBT arm) Thermal resistance – diode (Diode arm) Thermal resistance – case to heatsink (per module)
Junction temperature
Test Conditions Continuous dissipation – junction to case
Continuous dissipation – junction to case
Mounting torque 5Nm (with mounting grease) Transistor
Diode
Tstg Storage temperature range Screw torque
Mounting – M6 Electrical connections – M4 Electrical connections – M8
Min Typ. Max Units
- - 30 °C/kW - - 60 °C/kW
60 °C/kW - - 8 °C/kW - - 125 °C - - 125 °C -40 - 125 °C - - 5 Nm - - 2 Nm - - 10 Nm
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com
DIM250XCM65-TS000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
ICES IGES VGE(TH) VCE(sat) † IF IFM
VF †
Cies Qg Cres LM RINT
SCData
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Input capacitance
Gate charge
Reverse transfer capacitance Module inductance – per arm Internal resistance – per arm
Short circuit current, ISC
VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C VGE = ± 20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 250A VGE = 15V, IC = 250A, Tj = 125°C DC tp = 1ms
IF = 250A
IF = 250A, Tj = 125°C
VCE = 25V, VGE = 0V, f = 1MHz ±15V VCE = 25V, VGE = 0V, f = 1MHz
Tj = 125°C, VCC = 4400V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L* x dI/dt IEC 60747-9
Min Typ Max 1 30 1
5.5 6.5 7.5 3.0 4.0 250 500 3.6 3.6 4.3 4.3 40 3 0.8 25 270
1200
Units mA mA μA V V V A A V V V V nF μC nF nH μ
A
Note: † Measured at the auxiliary terminals * L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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DIM250XCM65-TS000
ELECTRICAL CHARACTERISTICS
Tc.