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DIM250XCM65-TS000 Dataheets PDF



Part Number DIM250XCM65-TS000
Manufacturers Dynex
Logo Dynex
Description Single Switch IGBT Module
Datasheet DIM250XCM65-TS000 DatasheetDIM250XCM65-TS000 Datasheet (PDF)

Replaces DS6172-1 Preliminary Information DIM250XCM65-TS000 Single Switch IGBT Module DS6172-2 April 2015 (LN32525) FEATURES  10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon  Isolated AlSiC Base with AlN Substrates  Lead Free construction APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations cover.

  DIM250XCM65-TS000   DIM250XCM65-TS000


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Replaces DS6172-1 Preliminary Information DIM250XCM65-TS000 Single Switch IGBT Module DS6172-2 April 2015 (LN32525) FEATURES  10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon  Isolated AlSiC Base with AlN Substrates  Lead Free construction APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 6500V and currents up to 2400A. The DIM250XCM65-TS000 is a 6500V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 6500V 3.0V 250A 500A * Measured at the auxiliary terminals 3(C) 2(G) 7(C) 5(A) 1(E) 6(E) 4(K) Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DIM250XCM65-TS000 Note: When ordering, please use the complete part number Outline type code: X (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1/8 DIM250XCM65-TS000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES IC IC(PK) Pmax I2t Visol QPD Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (IGBT arm) Diode I2t value (Diode arm) Isolation voltage – per module Partial discharge – per module Test Conditions VGE = 0V, Tj = 125°C VGE = 0V, Tj = 25°C VGE = 0V, Tj = -40°C Tcase = 90°C 1ms, Tcase = 115°C Tcase = 25°C, Tj = 125°C VR = 0, tp = 10ms, Tj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS Max. Units 6500 6500 6000 ±20 250 500 3300 22 22 V V V V A A W kA2s kA2s 10.2 kV 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Comparative Tracking Index): >600 Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance – transistor (per arm) Thermal resistance – diode (IGBT arm) Thermal resistance – diode (Diode arm) Thermal resistance – case to heatsink (per module) Junction temperature Test Conditions Continuous dissipation – junction to case Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting – M6 Electrical connections – M4 Electrical connections – M8 Min Typ. Max Units - - 30 °C/kW - - 60 °C/kW 60 °C/kW - - 8 °C/kW - - 125 °C - - 125 °C -40 - 125 °C - - 5 Nm - - 2 Nm - - 10 Nm 2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM250XCM65-TS000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions ICES IGES VGE(TH) VCE(sat) † IF IFM VF † Cies Qg Cres LM RINT SCData Collector cut-off current Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Input capacitance Gate charge Reverse transfer capacitance Module inductance – per arm Internal resistance – per arm Short circuit current, ISC VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C VGE = ± 20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 250A VGE = 15V, IC = 250A, Tj = 125°C DC tp = 1ms IF = 250A IF = 250A, Tj = 125°C VCE = 25V, VGE = 0V, f = 1MHz ±15V VCE = 25V, VGE = 0V, f = 1MHz Tj = 125°C, VCC = 4400V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L* x dI/dt IEC 60747-9 Min Typ Max 1 30 1 5.5 6.5 7.5 3.0 4.0 250 500 3.6 3.6 4.3 4.3 40 3 0.8 25 270 1200 Units mA mA μA V V V A A V V V V nF μC nF nH μ A Note: † Measured at the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3/8 DIM250XCM65-TS000 ELECTRICAL CHARACTERISTICS Tc.


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