FM24V01A

FM24V01A 128-Kbit (16K × 8) Serial (I2C) F-RAM 128-Kbit (16K × 8) Serial (I2C) F-RAM Features ■ 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data Retention and Endurance on page 13) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast two-wire serial interface (I2C) ❐ Up to 3.4-MHz frequency[1] ❐ Direct hardware replacement for serial EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Device ID ❐ Manufacturer ID and Product ID ■ Low power consumption ❐ 175-A active current at 100 kHz ❐ 150-A standby current ❐ 8-A sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Industrial temperature: –40 C to +85 C ■ 8-pin small outline integrated circuit (SOIC) package ■ Restriction of hazardous substances (RoHS) compliant Logic Block Diagram Functional Description The FM24V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24V01A performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cy...