FM25V10

FM25V10 1-Mbit (128K × 8) Serial (SPI) F-RAM 1-Mbit (128K × 8) Serial (SPI) F-RAM Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data Retention and Endurance on page 16) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast serial peripheral interface (SPI) ❐ Up to 40-MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array ■ Device ID and Serial Number ❐ Manufacturer ID and Product ID ❐ Unique Serial Number (FM25VN10) ■ Low power consumption ❐ 300 A active current at 1 MHz ❐ 90 A (typ) standby current ❐ 5 A sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Industrial temperature: –40 C to +85 C ■ Packages ❐ 8-pin small outline integrated circuit (SOIC) package ❐ 8-pin dual flat no-leads (DFN) package ■ Restriction of hazardous substances (RoHS) compliant Logic Block Diagram WP CS HOLD SCK Instruction Decoder Clock Generator Control Logic Write Protect Functional Description The FM25V10 is a 1-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs rea...