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PROTECTION PRODUCTS - MicroClamp® Description
The uClampTM series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD. They are designed to replace multilayer varistors (MLVs) in portable applications. They feature large crosssectional area junctions for conducting high transient currents and offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation. The µClampTM0511PQ is in a 2-pin, SLP1006P2 package. It measures 1.0 x 0.6 x 0.5mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one bidirectional line operating at ±5 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. The uClamp0511PQ is qualified to AEC-Q100 Grade 1 for Automotive use.
Package Dimensions
uClamp0511PQ
µClamp® 1-Line ESD protection
Features
Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE)
Ultra-small package (1.0 x 0.6 x 0.5mm) Protects one I/O or power line Low clamping voltage Working voltage: 5V Low leakage current Solid-state silicon-avalanche technology AEC-Q100 Grade 1 Qualified
Mechanical Characteristics
SLP1006P2 package Molding compound flammability rating: UL 94V-0 Packaging : Tape and Reel Lead Finish: NiPdAu Pb-Free, Halogen Free, RoHS/WEEE Compliant
Applications
Cellular Handsets & Accessories Cordless Phones Smart Phones Notebooks & Handhelds Portable Instrumentation Digital Cameras MP3 Players Automotive Applications
Schematic & Pin Configuration
10/9/2012
1
SLP1006P2 (Bottom View)
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uClamp0511PQ
PROTECTION PRODUCTS Absolute Maximum Ratings
Rating Peak Pulse Power (tp = 8/20µs) Peak Pulse Current (tp = 8/20µs) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Operating Temperature Storage Temperature
Symbol Ppk IPP
VESD
TJ TSTG
Value 170 12 +/- 15 +/- 8 -40 to +125 -55 to +150
Units Watts
A
kV
°C °C
Electrical Characteristics (T=25OC unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Reverse Stand-Off Voltage Reverse Breakdown Voltage
Reverse Leakage Current Clamping Voltage Clamping Voltage
Junction Capacitance
VRWM
Pin 1 to 2 or 2 to 1
VBR
Pin 1Itto=21omrA2 to 1 T=-40OC to +125OC
IR
Pin 1VRtoWM2=o5r V2, to 1
T=25OC T=125OC
VC
IPPPin=
1A, 1 to
t2p
= 8/20µs or 2 to 1
VC
IPPP=in
12A, 1 to
2tp
= or
8/20µs 2 to 1
Cj
PVinR
= 1
0V, f to 2
= 1MHz or 2 to 1
T=25OC T=125OC
6
Typical
8 0.025
Maximum
5
10
1 1 11
14 75 75
Units V V
µA V V pF
2012 Semtech Corp.
2
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uClamp0511PQ
Peak Pulse Power - PPP (kW)
PROTECTION PRODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10 TA = 25OC
1
0.1
0.01 0.1
1 10 Pulse Duration - tp (µs)
100
DR040412-170
1000
% of Rated Power or IPP
120 100
80 60 40 20
0 0
Power Derating Curve
25 50 75 100 Ambient Temperature - TA (OC)
DR040512:25:125:150
125 150
Clamping Voltage -VC (V)
Clamping Voltage vs. Peak Pulse Current
14
TA = 25OC
12
Waveform Parameters: tr = 8us; td = 20us
10
8
6
4
2
0511PQ 5412_1R1 VCvIPP_8_20
0 0 2 4 6 8 10 12 14 16 Peak Pulse Current - IPP (A)
Junction Capacitance - CJ (pF)
Capacitance vs. Reverse Voltage
50 TA = 25OC f = 1Mhz
40
30
20
10
0 0
123 Reverse Voltage - VR (V)
0511PQ 5412_1R1 CJvT
45
ESD Clamping (8kV Contact per IEC 61000-4-2)
50
TA = 25OC Waveform 1ns/60ns; VESD = +8kV Measured with and corrected for
40
50Ω, 40dB attenuator; 50Ω Scope Input Impedance.
30
20
10
0 -20
0
20 40 Time (ns)
60
0511PQ 5412_1R1 ESD_P8K
80 100
2012 Semtech Corp.
TLP Current (A)
TLP Clamping Voltage vs. Current
30 TA = 25OC TLP Parameters:
25 tp = 100ns; tr = 200ps Sampled 70% to 90% tp 10 point smoothing applied
20
15
10
5
0 0 2 4 6 8 10 DUT Clamp Voltage - VC (V)
12
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Clamping Voltage - VC (V)
Junction Capacitance - CJ (pF)
PROTECTION PRODUCTS Typical Characteristics (Continued)
Junction Capacitance vs. Temperature
60
f = 1MHz 50
0V
40
5V 30
20
10
0 -50
0511PQ 5412_1R1 CJvT
0 50 100 Temperature (OC)
150
Leakage Current vs. Reverse Voltage
30 TA = 25OC
25
20
15
10
5
0511PQ 5412_1R1 IR v V
0 0123456 Reverse Voltage - VR (V)
Breakdown Voltage - VBR (V)
Leakage Current - IR (nA)
uClamp0511PQ
Leakage Current vs. .