DatasheetsPDF.com

uClamp0511PQ Dataheets PDF



Part Number uClamp0511PQ
Manufacturers Semtech Corporation
Logo Semtech Corporation
Description 1-Line ESD protection
Datasheet uClamp0511PQ DatasheetuClamp0511PQ Datasheet (PDF)

PROTECTION PRODUCTS - MicroClamp® Description The uClampTM series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD. They are designed to replace multilayer varistors (MLVs) in portable applications. They feature large crosssectional area junctions for conducting high transient currents and offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They offer desirable characteristics for .

  uClamp0511PQ   uClamp0511PQ


Document
PROTECTION PRODUCTS - MicroClamp® Description The uClampTM series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD. They are designed to replace multilayer varistors (MLVs) in portable applications. They feature large crosssectional area junctions for conducting high transient currents and offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation. The µClampTM0511PQ is in a 2-pin, SLP1006P2 package. It measures 1.0 x 0.6 x 0.5mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one bidirectional line operating at ±5 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. The uClamp0511PQ is qualified to AEC-Q100 Grade 1 for Automotive use. Package Dimensions uClamp0511PQ µClamp® 1-Line ESD protection Features  Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE)  Ultra-small package (1.0 x 0.6 x 0.5mm)  Protects one I/O or power line  Low clamping voltage  Working voltage: 5V  Low leakage current  Solid-state silicon-avalanche technology  AEC-Q100 Grade 1 Qualified Mechanical Characteristics  SLP1006P2 package  Molding compound flammability rating: UL 94V-0  Packaging : Tape and Reel  Lead Finish: NiPdAu  Pb-Free, Halogen Free, RoHS/WEEE Compliant Applications  Cellular Handsets & Accessories  Cordless Phones  Smart Phones  Notebooks & Handhelds  Portable Instrumentation  Digital Cameras  MP3 Players  Automotive Applications Schematic & Pin Configuration        10/9/2012 1   SLP1006P2 (Bottom View) www.semtech.com uClamp0511PQ PROTECTION PRODUCTS Absolute Maximum Ratings Rating Peak Pulse Power (tp = 8/20µs) Peak Pulse Current (tp = 8/20µs) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Operating Temperature Storage Temperature Symbol Ppk IPP VESD TJ TSTG Value 170 12 +/- 15 +/- 8 -40 to +125 -55 to +150 Units Watts A kV °C °C Electrical Characteristics (T=25OC unless otherwise specified) Parameter Symbol Conditions Min. Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance VRWM Pin 1 to 2 or 2 to 1 VBR Pin 1Itto=21omrA2 to 1 T=-40OC to +125OC IR Pin 1VRtoWM2=o5r V2, to 1 T=25OC T=125OC VC IPPPin= 1A, 1 to t2p = 8/20µs or 2 to 1 VC IPPP=in 12A, 1 to 2tp = or 8/20µs 2 to 1 Cj PVinR = 1 0V, f to 2 = 1MHz or 2 to 1 T=25OC T=125OC 6 Typical 8 0.025 Maximum 5 10 1 1 11 14 75 75 Units V V µA V V pF  2012 Semtech Corp. 2 www.semtech.com uClamp0511PQ Peak Pulse Power - PPP (kW) PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 10 TA = 25OC 1 0.1 0.01 0.1 1 10 Pulse Duration - tp (µs) 100 DR040412-170 1000 % of Rated Power or IPP 120 100 80 60 40 20 0 0 Power Derating Curve 25 50 75 100 Ambient Temperature - TA (OC) DR040512:25:125:150 125 150 Clamping Voltage -VC (V) Clamping Voltage vs. Peak Pulse Current 14 TA = 25OC 12 Waveform Parameters: tr = 8us; td = 20us 10 8 6 4 2 0511PQ 5412_1R1 VCvIPP_8_20 0 0 2 4 6 8 10 12 14 16 Peak Pulse Current - IPP (A) Junction Capacitance - CJ (pF) Capacitance vs. Reverse Voltage 50 TA = 25OC f = 1Mhz 40 30 20 10 0 0 123 Reverse Voltage - VR (V) 0511PQ 5412_1R1 CJvT 45 ESD Clamping (8kV Contact per IEC 61000-4-2) 50 TA = 25OC Waveform 1ns/60ns; VESD = +8kV Measured with and corrected for 40 50Ω, 40dB attenuator; 50Ω Scope Input Impedance. 30 20 10 0 -20 0 20 40 Time (ns) 60 0511PQ 5412_1R1 ESD_P8K 80 100  2012 Semtech Corp. TLP Current (A) TLP Clamping Voltage vs. Current 30 TA = 25OC TLP Parameters: 25 tp = 100ns; tr = 200ps Sampled 70% to 90% tp 10 point smoothing applied 20 15 10 5 0 0 2 4 6 8 10 DUT Clamp Voltage - VC (V) 12 3 www.semtech.com Clamping Voltage - VC (V) Junction Capacitance - CJ (pF) PROTECTION PRODUCTS Typical Characteristics (Continued) Junction Capacitance vs. Temperature 60 f = 1MHz 50 0V 40 5V 30 20 10 0 -50 0511PQ 5412_1R1 CJvT 0 50 100 Temperature (OC) 150 Leakage Current vs. Reverse Voltage 30 TA = 25OC 25 20 15 10 5 0511PQ 5412_1R1 IR v V 0 0123456 Reverse Voltage - VR (V) Breakdown Voltage - VBR (V) Leakage Current - IR (nA) uClamp0511PQ Leakage Current vs. .


BBT3821 uClamp0511PQ IRU1176


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)