BAS40W-04

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 BAS40W/-04/-05/-06 SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40W MARKING: 43 MARKING: BAS40W BAS40W-06 MARKING: 46 BAS40W-05 MARKING：45 BAS40W-04 MARKING：44 BAS40W-06 BAS40W-05 BAS40W-04 Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25℃ Parameter Symbol Limit Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current VRRM VRWM VR IFM 40 200 Power dissipation PD 150 Thermal resistance junction to ambient RθJA 667 Junction temperature TJ 125 Storage temperature range TSTG -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR VF CD t rr Test conditions IR= 10μA VR=30V IF=1mA IF=40mA VR=0,f=1MHz Irr=1mA, IR=IF=10mA RL=100Ω Min 40 www.cj-elec.com 1 Unit V mA mW ℃/W ℃ ℃ Max 200 380 1000 5 5 Unit V nA mV pF ns D,Oct,2015 Typical Characteristics Forward Characteristics 200 100 ℃ =25℃ =100 T a T a FORWARD CURRENT I (mA) F 10 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 REVERSE CURRENT I (uA) R 100 10 1 0.1 0.01 1E-3 0 Reverse Characteristics T =100 ℃ a T =25℃ a 10 20 30 REVERSE VOLTAGE V (V) R 40 CAPACITANCE BETWEEN TERMINALS C (pF) T Capacita...