JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
SOT-323
BAS40W/-04/-05/-06 SCHOTTK...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
SOT-323
BAS40W/-04/-05/-06
SCHOTTKY BARRIER DIODE
FEATURES z Low Forward Voltage z Fast Switching
BAS40W MARKING: 43
MARKING: BAS40W
BAS40W-06 MARKING: 46 BAS40W-05 MARKING:45 BAS40W-04 MARKING:44
BAS40W-06
BAS40W-05
BAS40W-04
Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage
Forward continuous current
VRRM VRWM
VR
IFM
40 200
Power dissipation
PD 150
Thermal resistance junction to ambient
RθJA
667
Junction temperature
TJ 125
Storage temperature range
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time
Symbol V(BR) IR VF CD t rr
Test conditions
IR= 10μA
VR=30V IF=1mA IF=40mA VR=0,f=1MHz Irr=1mA, IR=IF=10mA RL=100Ω
Min 40
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1
Unit
V
mA mW ℃/W ℃ ℃
Max
200 380 1000
5 5
Unit V nA
mV
pF ns
D,Oct,2015
Typical Characteristics
Forward Characteristics
200 100
℃
=25℃
=100
T a
T a
FORWARD CURRENT I (mA) F
10
1
0.1
0.01 0.0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE V (V) F
1.0
REVERSE CURRENT I (uA) R
100 10 1 0.1
0.01 1E-3
0
Reverse Characteristics
T =100 ℃ a
T =25℃ a
10 20 30
REVERSE VOLTAGE V (V) R
40
CAPACITANCE BETWEEN TERMINALS C (pF)
T
Capacita...