2SK1608

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1608 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=25V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=3A;RL=50Ω 2SK1608 MIN TYP MAX UNIT 500 V 1.0 5.0 V 1.35 1.70 Ω ±1 uA 100 uA 60 ns 120 ns NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC ...