2SK1613

isc N-Channel MOSFET Transistor 2SK1613 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT DSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1613 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA 900 V VGS(th) Gate Threshold Voltage VDS=25V; ID=1mA 2.0 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A 2.0 2.8 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±1 uA IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 0.1 m A ton Turn-on time toff Turn-off time 90 ns VGS=10V;ID=3A;RL=66Ω 250 ns NOTICE： ISC reserves the rights to make changes of the co...